smd type transistors features 2w power dissipation. 20a peak pulse current. excellent hfe characteristics up to 10 amps. extremely low saturation voltage e.g. 45mv typ. extremely low equivalent on-resistance. r ce(sat) 67m at 3a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v continuous collector current i cm -10 a peak pulse current i c -3 a base current i b -500 ma power dissipation p tot 1w operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FCX1149A smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -30 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -25 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 v collector cut-off current i cbo v cb =-24v -0.3 -100 na collector emitter cut-off current i ces v ce =-20v -0.3 -100 na emitter cut-off current i ebo v eb =-4v -0.3 -100 na collector-emitter saturation voltage * v ce( sat) i c =-0.1a, i b =-1ma i c =-0.5a, i b =-3ma i c =-1a, i b =-7ma i c =-3a, i b =-100ma i c =-4a, i b =-140ma -45 -100 -140 -200 -230 -80 -170 -240 -300 -350 mv base-emitter saturation voltage * v be( sat) i c =-3a, i b =-100ma -930 -1050 mv base-emitter on voltage * v be(on ) i c =-3a, v ce =-2v -840 -1000 mv static forward current transfer ratio* h fe i c =-10ma,v ce =-2v i c =-0.5a,v ce =-2v i c =-3a,v ce =-2v i c =-5a,v ce =-2v i c =-10a,v ce =-2v 270 250 150 115 450 400 260 190 50 - 800 transitional frequency f t i c =-50ma, v ce =-10v, f=50mhz 135 mhz output capacitance c obo v cb =-10v, f=1mhz 10 pf turn-on time t (on) i c =-4a, v cc =-10v 150 ns turn-off time t (off) i b1 =i b2 =-40ma 270 ns * pulse test: tp = 300 s; d 0.02. FCX1149A marking marking 149 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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